Galaxy Century Microelectronics 2SC3303
Silicon NPN Transistor
FEATURES
● Low collector saturation voltage: VCE(sat)=0.4V(max)(IC=3A).● High speed switching time:tstg=1us(typ). Pb Lead-free
APPLICATIONS
● High Current SwitchingAPPLICATIONS
.● DC-DC Converter
APPLICATIONS
. Production specification 2SC3303 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7V IC Collector Current(DC) 5A ICP Collector Current(Pulse) 8A IB Base Current 1A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)013 Rev.A 1 Production specification Silicon NPN Epitaxial Type 2SC3303ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter breakdown voltage VCEO IC=10mA,IB=0 80 V Emitter-bas