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2SC3303 - Silicon NPN Transistor

Key Features

  • Low collector saturation voltage: VCE(sat)=0.4V(max)(IC=3A).
  • High speed switching time:tstg=1us(typ). Pb Lead-free.

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Silicon NPN Epitaxial Type FEATURES  Low collector saturation voltage: VCE(sat)=0.4V(max)(IC=3A).  High speed switching time:tstg=1us(typ). Pb Lead-free APPLICATIONS  High Current Switching Applications.  DC-DC Converter Applications. Production specification 2SC3303 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7V IC Collector Current(DC) 5A ICP Collector Current(Pulse) 8A IB Base Current 1A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)013 Rev.A www.gmesemi.