| Part number | 2SC3303 |
|---|---|
| Datasheet | 2SC3303-InchangeSemiconductor.pdf |
| File Size | 218.43 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 150mA VBE(sat) Base-Emitter Saturation Voltage IC= 3.0A; IB= 150mA V(BR)CBO Collector-Base Breakdown Voltage IC= 100uA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC3303 | NPN Epitaxial Planar Silicon Transistor | SeCoS |
 |
2SC3303 | SILICON NPN TRANSISTOR | Toshiba Semiconductor |
 |
2SC3303 | Silicon NPN Transistor | GME |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SC3353 | Power Transistor |
| 2SC3355 | Silicon NPN RF Transistor |
| 2SC3356 | Silicon NPN Transistor |
| 2SC3357 | Silicon NPN RF Transistor |
| 2SC3371 | Power Transistor |
| 2SC3388 | Power Transistor |
| 2SC3085 | Silicon NPN Power Transistor |
| 2SC3094 | Silicon NPN Power Transistor |
| 2SC3121 | Silicon NPN RF Transistor |
| 2SC3122 | Silicon NPN RF Transistor |
