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2SC4155 - Silicon Epitaxial Planar Transistor

Key Features

  • z Small collector to emitter saturation voltage VCE(sat)=0.3V max z Excellent linearity of DC forward gain. z Super mini package for easy mounting Pb Lead-free.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Epitaxial Planar Transistor FEATURES z Small collector to emitter saturation voltage VCE(sat)=0.3V max z Excellent linearity of DC forward gain. z Super mini package for easy mounting Pb Lead-free APPLICATIONS z For Hybrid IC,small type machine low frequency voltage Amplify application. Production specification 2SC4155 SOT-323 ORDERING INFORMATION Type No. Marking 2SC4155 HQ/HR/HS/HT Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 50 VCEO VEBO IO PC Tstg Tj, Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Storage Temperature Junction Temperature 50 6 100 200 -55 to +150 150 Units V V V mA mW ℃ ℃ F111 Rev.A www.gmicroelec.