Galaxy Century Microelectronics 2SC4226
NPN Transistor
FEATURES
● Low noise.● High gain.
● Power dissipation.(PC=150mW) Pb Lead-free 2SC4226
APPLICATIONS
● High frequency low noise amplifier. ORDERING INFORMATION Type No. Marking 2SC4226 R23/R24/R25 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 20 VCEO Collector-Emitter Voltage 12 VEBO Emitter-Base Voltage 3 IC Collector Current -Continuous 100 PC Collector Dissipation 150 Tj,Tstg Junction and Storage Temperature -65 to +150 Units V V V mA mW ℃ F042 Rev.A 1 Production specification NPN Silicon Epitaxial Planar Transistor 2SC4226ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage V(BR)CBO V(BR)CEO IC=100μA,IE=0 IC=1mA,IB=0 20 12 V V Emit