Inchange Semiconductor 2SC4226
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC4226 |
|---|---|
| Datasheet | 2SC4226 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Curren -IC= 0.1A●Low Collector Power—Pc=0.1W With SOT-323 Package
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for broadband low noise amplifier ; wideband low noise amplifieABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 100 mA 100 mW 150 ℃ Tstg Storage Temperature Range -65--150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCBO Collector-Base Voltage IC= 1uA,Ib=0 ICBO Collector Cutoff Current VCB= 10V:IE= 0 IEBO Emitter Cutoff Current VEB= 1V;IC= 0 hFE DC Current Gain IC= 7mA ; VCE= 3V fT Current-Gain—Bandwidth Product IC= 7mA ; VCE= 3V Cre Output Capacitance I...
