Galaxy Century Microelectronics 2SD1624
NPN Epitaxial Planar Silicon Transistors
FEATURES
● Fast switching speed.● Low collector-to-emitter saturation voltage.
● Large current capacity and wide ASO.
● RoHS compliant with Halogen-free Product Specification 2SD1624 ORDERING INFORMATION Type No. 2SD1624-R 2SD1624-S 2SD1624-T 2SD1624-U Marking DG DG DG DG SOT-89 Package Code SOT-89 SOT-89 SOT-89 SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO IC PC Emitter-Base Voltage Collector Current –DC -Pulse Collector Dissipation Tj,Tstg Junction and Storage Temperature Note 1. Mounted on ceramic board (250mm2×0.8mm) 6 V 3 A 6 0.5 W 1.5(Note1) -55 to+150 ℃ STM0096A: August 2025 [1.0] 1 Product Specification NPN Epitaxial Planar Silicon Transistors 2SD1624
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO...