Galaxy Century Microelectronics 2SD1803
NPN Epitaxial Planar Silicon Transistors
| Part No. | 2SD1803 |
|---|---|
| Datasheet | 2SD1803 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | NPN Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
FEATURES
z Low collector-to-emitter saturation voltage. Pb z High current and high fT. Lead-free z Excellent linerarity of hFE. z Fast switching time. Production specification 2SD1803APPLICATIONS
z High-Current SwitchingAPPLICATIONS
. TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 60 V VCEO Collector-Emitter Voltage 50 V VEBO IC ICM PC Tj ,Tstg Emitter-Base Voltage Collector Current DC PULSE Collector Power Dissipation Tc=25℃ Ta=25℃ Junction and Storage temperature range 6 5 8 20 1 -40 to +150 V A W ℃ V(W)088 Rev.A 1 Production specification NPN Epitaxial Planar Silicon Transistors 2SD1803ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage VCBO Collector-emitter breakdown voltage VCEO
