Datasheet Summary
NPN Epitaxial Planar Silicon Transistors
Features z Low collector-to-emitter saturation voltage. Pb z High current and high fT.
Lead-free z Excellent linerarity of hFE. z Fast switching time.
Production specification
APPLICATIONS z High-Current Switching Applications.
TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
60 V
VCEO
Collector-Emitter Voltage
50 V
VEBO IC ICM PC
Tj ,Tstg
Emitter-Base Voltage
Collector Current
DC PULSE
Collector Power Dissipation
Tc=25℃ Ta=25℃
Junction and Storage temperature range
5 8 20 1
-40 to +150
V A W ℃
V(W)088...
