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2SD1803 - NPN Epitaxial Planar Silicon Transistors

Key Features

  • z Low collector-to-emitter saturation voltage. Pb z High current and high fT. Lead-free z Excellent linerarity of hFE. z Fast switching time. Production specification 2SD1803.

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NPN Epitaxial Planar Silicon Transistors FEATURES z Low collector-to-emitter saturation voltage. Pb z High current and high fT. Lead-free z Excellent linerarity of hFE. z Fast switching time. Production specification 2SD1803 APPLICATIONS z High-Current Switching Applications. TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 60 V VCEO Collector-Emitter Voltage 50 V VEBO IC ICM PC Tj ,Tstg Emitter-Base Voltage Collector Current DC PULSE Collector Power Dissipation Tc=25℃ Ta=25℃ Junction and Storage temperature range 6 5 8 20 1 -40 to +150 V A W ℃ V(W)088 Rev.A www.gmicroelec.