Galaxy Century Microelectronics 2SD1815
NPN Epitaxial Planar Silicon Transistors
| Part No. | 2SD1815 |
|---|---|
| Datasheet | 2SD1815 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | NPN Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
FEATURES
● Adoption of FBET,MBIT processes. Pb● Large current capacity and wide ASO. Lead-free
● Low collector-to-emitter saturation voltage.
● Excllent linearity of hFE.
● High fT.
● Fast switching time. 2SD1815
APPLICATIONS
● Relay drivers,high-speed inverters, Converters,and other high-current Switching applications. TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6V IC Collector Current 3A ICP Collector Power Dissipation 6A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ W019 Rev.A 1 Production specification NPN Epitaxial Planar Silicon Transistors 2SD1815ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter
