Datasheet Summary
Production specification
NPN Epitaxial Planar Silicon Transistors
Features
- Adoption of FBET,MBIT processes.
Pb
- Large current capacity and wide ASO. Lead-free
- Low collector-to-emitter saturation voltage.
- Excllent linearity of hFE.
- High fT.
- Fast switching time.
APPLICATIONS
- Relay drivers,high-speed inverters, Converters,and other high-current Switching applications.
TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
120 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
6V
IC Collector...
