SeCoS Halbleitertechnologie GmbH 2SD1815
NPN Epitaxial Planar Silicon Transistor
| Part No. | 2SD1815 |
|---|---|
| Datasheet | 2SD1815 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Low Collector-to-Emitter Saturation Voltage● Excllent Linearity of hFE
● High fT
● Fast Switching Time TO-251 CLASSIFICATION OF hFE Product-Rank 2SD1815-Q Range 70~140 2SD1815-R 100~200 2SD1815-S 140~280 Collector Base
● Emitter
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG 120 100 6 3 1 150 -55 ~ 150 A B GE K F C D H REF. A B C D E F MJ Millimeter Min. Max. 6.35 6.80 4.90 5.50 2.15 2.40 0.43 0.90 6.50 7.50 7.20 9.65 REF. G H J K M P P Millimeter Min. Max. 5.40 6.25 0.85 1.50 2.30 0.60 1.05 0.50 0.90 0.43 0.62 Unit V V V A W ℃ ℃ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off curren...