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2SD1815 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Low Collector-to-Emitter Saturation Voltage.
  • Excllent Linearity of hFE.
  • High fT.
  • Fast Switching Time TO-251.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente 2SD1815 3A , 120V NPN Epitaxial Planar Silicon Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Low Collector-to-Emitter Saturation Voltage  Excllent Linearity of hFE  High fT  Fast Switching Time TO-251 CLASSIFICATION OF hFE Product-Rank 2SD1815-Q Range 70~140 2SD1815-R 100~200 2SD1815-S 140~280 Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG 120 100 6 3 1 150 -55 ~ 150 A B GE K F C D H REF.