Galaxy Century Microelectronics 2SD1864
Power Transistor
| Part No. | 2SD1864 |
|---|---|
| Datasheet | 2SD1864 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
z Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) z Complements the 2SB1184.APPLICATIONS
z Epitaxial planar type. z NPN silicon transistor. Pb Lead-free Production specification 2SD1864 TO-251 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5V IC Collector Current(DC) 3A ICP Collector Current(Pulse) 4.5 A IB Base Current 1A PC Collector Power Dissipation 1.5 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V040 Rev.A 1 Production specification Power Transistor 2SD1864ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage VCBO VCEO VEBO IC=50uA,IE=0 IC=1mA,IB=0 IE=50uA,IC=0 60 50
