2SD1864 - Power Transistor

Galaxy Microelectronics

Key Features

z Low VCE(sat). VCE(sat)=0.5V(Typ. ) (IC/IB=2A/0.2A) z Complements the 2SB1184.

2SD1864 power transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2SD1864
Manufacturer	Galaxy Microelectronics
File Size	182.78 KB
Description	Power Transistor
Datasheet	2SD1864 Datasheet

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Full PDF Text Transcription (Reference)

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Power Transistor FEATURES z Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) z Complements the 2SB1184. APPLICATIONS z Epitaxial planar type. z NPN silicon transistor. Pb Lead-free Production specification 2SD1864 TO-251 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5V IC Collector Current(DC) 3A ICP Collector Current(Pulse) 4.5 A IB Base Current 1A PC Collector Power Dissipation 1.5 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V040 Rev.A www.gmicroelec.