2SD1864 Datasheet PDF

FEATURES

1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1243.
●Structure Epitaxial planar type NPN silicon transistor
●Dimensions (Unit : mm) 2SD1864 6.8±0.2 2.5±0.2 4.4±0.2 1.0 0.9 0.65Max. 14.5±0.5 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 0.45±0.1 ROHM : ATV (1) Emitter (2) Collector (3) Base
●Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current 3 A (DC) IC 4.5 A (Pulse) ∗1 Collector power dissipation PC 1 W ∗2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 Single pulse, PW=100ms ∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
●Electrical characteristics (Ta=25C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage