Galaxy Century Microelectronics 2SD2114
Silicon Epitaxial Planar Transistor
| Part No. | 2SD2114 |
|---|---|
| Datasheet | 2SD2114 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
● High DC current gain.● High emitter-base voltage.
● Low VCE(sat).
● RoHS compliant with Halogen-free 2SD2114
APPLICATIONS
● General purpose amplifiers. ORDERING INFORMATION Type No. 2SD2114-X 2SD2114-V 2SD2114-W Marking BBX BBV BBW SOT-23 Package Code SOT-23 SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 25 VCEO Collector-Emitter Voltage 20 VEBO Emitter-Base Voltage 12 IC Collector Current -Continuous 500 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ STM0220A 1 Product Specification Silicon Epitaxial Planar Transistor 2SD2114ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 25 Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 20 Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 12 Collector cut-off current ICBO VCB=20V,IE=0 0.5 E...
