Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
2SD2114 TRANSISTOR (NPN)
Features z High DC current gain. z High emitter-base voltage. z Low VCE (sat).
MARKING: BBV,BBW
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value 25 20 12 0.5 0.25 150
-55~150
Unit V V V A W ℃ ℃
SOT-23
1. BASE 2.EMITTER 3.COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter...
