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2SD2413 - Silicon NPN triple diffusion planer type Transistor

Key Features

  • High collector to base voltage VCBO.
  • High collector to emitter voltage VCEO.
  • Large collector power dissipation PC. Pb Lead-free.
  • Low collector to emitter saturation voltage VCE(sat). Production specification 2SD2413.

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Silicon NPN triple diffusion planer type FEATURES  High collector to base voltage VCBO.  High collector to emitter voltage VCEO.  Large collector power dissipation PC. Pb Lead-free  Low collector to emitter saturation voltage VCE(sat). Production specification 2SD2413 ORDERING INFORMATION Type No. Marking 2SD2413 1S SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector power dissipation Junction Temperature Storage Temperature 400 400 5 0.1 0.2 1 150 -55 to +150 V V V A(DC) A(Pulse)*1 W ℃ ℃ E063 Rev.A www.gmesemi.