2SD2413
2SD2413 is Silicon NPN Transistor manufactured by Panasonic.
Features q q q q q
4.5±0.1 1.6±0.2
1.5±0.1
High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
2.6±0.1
0.4max.
45°
1.0- 0.2
+0.1
0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1
4.0- 0.20
0.4±0.04 s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
- (Ta=25˚C)
Ratings 400 400 5 200 100 1 150
- 55 ~ +150 1cm2 Unit V V V m A m A W ˚C ˚C
1:Base 2:Collector 3:Emitter marking
Symbol VCBO VCEO VEBO ICP IC PC- Tj Tstg
EIAJ:SC- 62 Mini Power Type Package
Marking symbol : 1S
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol VCBO VCEO VEBO h FE VCE(sat) VBE(sat) f T Cob Conditions IC = 100µA, IE = 0 IC = 500µA, IB = 0 IE = 100µA, IC = 0 VCE = 5V, IC = 30m A IC = 50m A, IB = 5m A IC = 50m A, IB = 5m A VCB = 30V, IE =
- 20m A, f = 200MHz VCB = 30V, IE = 0, f = 1MHz 40 7 min 400 400 5 30 1.5 1.5 V V MHz p F typ max Unit V V V
2.5±0.1
+0.25
Transistor
- Ta
- VCE
Collector to emitter saturation voltage VCE(sat) (V)
120 Ta=25˚C 100 100 30 10 3 1 25˚C 0.3
- 25˚C 0.1 0.03 0.01 0.1 Ta=75˚C
VCE(sat)
- IC
IC/IB=10
Collector power dissipation PC...
