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2SD2413 - Silicon NPN Transistor

Key Features

  • q q q q q 4.5±0.1 1.6±0.2 1.5±0.1 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 0.4max. 45° 1.0.
  • 0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 4.0.
  • 0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Col.

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Datasheet Details

Part number 2SD2413
Manufacturer Panasonic
File Size 37.02 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD2413 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SD2413 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm s Features q q q q q 4.5±0.1 1.6±0.2 1.5±0.1 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 0.4max. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 4.0–0.20 0.4±0.