Galaxy Century Microelectronics 5N65
N-Channel Power Mosfet
| Part No. | 5N65 |
|---|---|
| Datasheet | 5N65 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | N-Channel Power Mosfet |
| Buy | Stock & Price |
FEATURES
● RDS(ON) =2.4Ω@ VGS = 10V● Ultra low gate charge ( typical 15 nC ) Pb Lead-free
● Low reverse transfer Capacitance ( CRSS = typical 6.5 pF )
● Fast switching capability
● Avalanche energy specified
● Improved dv/dt capability, high ruggedness Production specification 5N65 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM EAS EAR dv/dt Gate -Source voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient TJ Junction Temperature TOPR, Tstg Operating and Storage Temperature TO-220AB Value 650 ±30 5.0 20 210 10 4.5 75 62.5 +150 -55 to +150 Units V V A A mJ V/ns W ℃/W ℃ ℃ X115 Rev.A 1 Production specification 5A,650V N-Channel Power Mosfet 5N65
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwi
