5N65 Datasheet | Galaxy Microelectronics

5A,650V N-Channel Power Mosfet Features - RDS(ON) =2.4Ω@ VGS = 10V - Ultra low gate charge ( typical 15 nC ) Pb Lead-free - Low reverse transfer Capacitance ( CRSS = typical 6.5 pF ) - Fast switching capability - Avalanche energy specified - Improved dv/dt capability, high ruggedness Production specification MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS IDM EAS EAR dv/dt Gate -Source voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient TJ Junction Temperature TOPR, Tstg...