| Part Number | 5N65 Datasheet |
|---|---|
| Manufacturer | Nell Power Semiconductor |
| Overview | The Nell 5N65 is a three-terminal silicon device with current conduction capability of 5A, fast switching speed, low on-state resistance, breakdown voltage rating of 650V, and max. threshold voltage o. RDS(ON) = 2.4Ω@VGS = 10V Ultra low gate charge(19nC max.) Low reverse transfer capacitance (CRSS = 6.5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-251 (I-PAK) (5N65F) D D G S TO-252 (D-PAK) (5N65G) GDS TO-220A. |
5N65 Datasheet and Specifications PDF
The 5N65 is a N-Channel Power MOSFET.
| Part Number | 5N65 Datasheet |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
5N65
·FEATURES ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 2.4Ω(Max) @.
*Drain Current ID= 5A@ TC=25℃ *Drain Source Voltage : VDSS= 650V(Min) *Static Drain-Source On-Resistance : RDS(on) = 2.4Ω(Max) @VGS = 10 V *Avalanche Energy Specified *Fast Switching *Simple Drive Requirements *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPL. |
| Part Number | 5N65 Datasheet |
|---|---|
| Description | N-Channel Power Mosfet |
| Manufacturer | Galaxy Microelectronics |
| Overview |
5A,650V N-Channel Power Mosfet
FEATURES
RDS(ON) =2.4Ω@ VGS = 10V Ultra low gate charge ( typical 15 nC )
Pb
Lead-free
Low reverse transfer Capacitance ( CRSS = typical 6.5 pF )
Fast switc.
* RDS(ON) =2.4Ω@ VGS = 10V * Ultra low gate charge ( typical 15 nC ) Pb Lead-free * Low reverse transfer Capacitance ( CRSS = typical 6.5 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness Production specification 5N65 MAXIMUM RATING @ . |
| Part Number | 5N65 Datasheet |
|---|---|
| Description | N-CHANNEL POWER MOSFET |
| Manufacturer | Unisonic Technologies |
| Overview |
The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. Th.
* RDS(ON) < 2.4Ω @VGS = 10 V * Ultra Low Gate Charge ( Typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 6.5 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness0
* SYMBOL Power MOSFET * ORDERING INFORMATION Note: Ordering N. |