Galaxy Century Microelectronics B5818W
Schottky Barrier Diode
FEATURES
● Extremely low VF.● Low stored change,majority carrier conduction
● Low power loss/high efficient.
● MSL 1.
APPLICATIONS
Pb Lead-free● For Use In Low Voltage, High Frequency Inverters
● Free Wheeling, And Polarity Protection
APPLICATIONS
B5818W-B5819W SOD-123 ORDERING INFORMATION Type No. Marking B5818W B5819W SK SL Package Code SOD-123 SOD-123 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter symbol B5818W Non-Repetitive Peak reverse voltage VRSM 36 B5819W Unit 48 V Peak repetitive Peak reverse voltage Working Peak Reverse voltage DC Reverse Voltage VRRM VRWM VR 30 40 V RMS Reverse Voltage Average Rectified output Current Repetitive Peak Forward Current (At Rated VR, Square Wave, 100 kHz, TL = 95°C) Peak forward surge current@=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature Rage VR(RMS) Io IFRM IFSM Pd RθJA TJ,TSTG 21 28 1 625 1