Rectron Semiconductor B5818W
Schottky Barrier Diode
FEATURES
High Current Capability Low Forward Voltage Drop P/N suffix V means AEC-Q101 qualified P/N suffix V means Halogen-freeMECHANICAL DATA
SOD-123 Small Outline Plastic Package Polarity: Color band denotes cathode end Mounting Position: Any Marking: B5817W: SJ B5818W: SK B5819W: SLMAXIMUM RATINGS
& Thermal Characteristics (Ratings at 25ć ambient temperature unless otherwise specified.) Parameters Symbol B5817W B5818W B5819W Unit Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current VRRM VRMS VDC IFM Peak forward surge current 8.3 ms single half sine-wave Typical Current Squared Time IFSM I2T Typical thermal resistance Power Dissipation Storage temperature range RθJA PD TSTG / TJ 20 14 20 30 21 30 1.0 9 0.336 250 500 -50-+150 40 28 40 V V V A A A2S ć/W mW ćELECTRICAL CHARACTERISTICS
(Ratings at 25ć ambient temp