Galaxy Century Microelectronics B5819WS
Schottky Barrier Diode
FEATURES
● Extremely low VF .● Low stored change,majority carrier conduction
● Low power loss/high efficient.
● MSL 1.
APPLICATIONS
Pb Lead-free● For Use In Low Voltage, High Frequency Inverters.
● Free Wheeling, And Polarity Protection
APPLICATIONS
. B5818WS-B5819WS SOD-323 ORDERING INFORMATION Type No. Marking B5818WS B5819WS SK SL Package Code SOD-323 SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter symbol B5818WS Non-Repetitive Peak reverse voltage VRM 36 B5819WS 48 Unit V Peak repetitive Peak reverse voltage Working Peak Reverse voltage DC Reverse Voltage VRRM VRWM 30 40 V VR RMS Reverse Voltage Average Rectified output Current Peak forward surge current@=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature Rage VR(RMS) 21 28 Io 1 IFSM 10 Pd 235 RθJA 80 TJ,TSTG -65 to +150 V A A mW ℃/W ℃ B009 Rev.A