B5819WS - Schottky Barrier Diode

Galaxy Microelectronics

Download the B5819WS datasheet PDF. This datasheet also covers the B5818WS variant, as both devices belong to the same schottky barrier diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

Extremely low VF.
Low stored change,majority carrier conduction.
Low power loss/high efficient.
MSL 1.

📥 Download Datasheet

B5819WS schottky barrier diode by Galaxy Microelectronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (B5818WS-GME.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	B5819WS
Manufacturer	Galaxy Microelectronics
File Size	147.28 KB
Description	Schottky Barrier Diode
Datasheet	B5819WS Datasheet

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Other Datasheets by Galaxy Microelectronics

Part Number	Description
B5819W	Schottky Barrier Diode
B5817W	Schottky Barrier Diode
B5817WS	Schottky Barrier Diode
B5818W	Schottky Barrier Diode
B5818WS	Schottky Barrier Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Production specification Schottky Barrier Diode FEATURES  Extremely low VF .  Low stored change,majority carrier conduction  Low power loss/high efficient.  MSL 1. APPLICATIONS Pb Lead-free  For Use In Low Voltage, High Frequency Inverters.  Free Wheeling, And Polarity Protection Applications. B5818WS-B5819WS SOD-323 ORDERING INFORMATION Type No. Marking B5818WS B5819WS SK SL Package Code SOD-323 SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter symbol B5818WS Non-Repetitive Peak reverse voltage VRM 36 B5819WS 48 Unit V Peak repetitive Peak reverse voltage Working Peak Reverse voltage DC Reverse Voltage VRRM VRWM 30 40 V VR RMS Reverse Voltage Average Rectified output Current Peak forward surge current@=8.