JCET B5819WS
SCHOTTKY BARRIER DIODE
FEATURES
For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications MARKING: B5817WS:SJ B5818WS:SK B5819WS:SL SOD-323 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device.MAXIMUM RATINGS
andELECTRICAL CHARACTERISTICS
, Single Diode @Ta=25℃ Parameter Non-repetitive peak reverse voltage Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current Non-repetitive Peak Forward Surge Current @t=8.3ms Repetitive peak forward current Power dissipation Thermal resistance junction to ambient Junction temperature Storage temperature Symbol VRM VRRM VRWM VR VR(RMS) IO IFSM IFRM Pd RθJA TJ TSTG B5817WS 20 20 14 B5818WS B5819WS 30 40 30 40 21 1 9 1.5 250 400 125 -55~+150 28 Unit V V V A A A mW ℃/W ℃ ℃ELECTRICAL CHARACTERISTICS
(Ta= 25℃ unles s other wise specified) Pa rameter Reverse breakdown voltage Reverse voltage leakage c...