Galaxy Century Microelectronics BF821
PNP High-Voltage Transistors
FEATURES
z Low current(max.-50mA). z High voltage(max.-300V). z Complements:BF820,BF822. Pb Lead-freeAPPLICATIONS
z Telephony and professional communication equipment. Production specification BF821/BF823 ORDERING INFORMATION Type No. Marking BF821 BF823 1W 1Y SOT-23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage BF821 BF823 BF821 BF823 -300 -250 -300 -250 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -50 IB Base Current-Peak -50 Ptot Total Power Dissipation 250 Tj,Tstg Junction and Storage Temperature -65 to +150 Unit V V V mA mA mW ℃ C108 Rev.A 1 Production specification PNP High-Voltage Transistors BF821/BF823ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC