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BF821 - PNP high-voltage transistors

General Description

PNP transistor in a SOT23 plastic package.

NPN complements: BF820, BF822.

1Y

1.

= p : Made in Hong Kong.

= t : Made in Malaysia.

= W : Made in China.

Key Features

  • Low current (max. 50 mA).
  • High voltage (max. 300 V).

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Other Datasheets by NXP Semiconductors

Part Number Description
BF820 NPN high-voltage transistors
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BF822 NPN high-voltage transistors
BF822W NPN high-voltage transistors
BF823 PNP high-voltage transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BF821; BF823 PNP high-voltage transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors PNP high-voltage transistors Product data sheet BF821; BF823 FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony and professional communication equipment. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BF820, BF822. handbook, halfpage 3 3 MARKING TYPE NUMBER BF821 BF823 MARKING CODE(1) 1W* 1Y* Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. 1 Top view 1 2 MAM256 2 Fig.1 Simplified outline (SOT23) and symbol.