BL12N65
BL12N65 is N-Channel Power Mosfet manufactured by Galaxy Microelectronics.
Production specification
N-Channel Enhancement Mode Field Effect Transistor BL12N65
Features
- DPAK Worldwide Best RDS(on).
- High dv/dt Capability.
- Excellent Switching Performace.
Pb
Lead-free
- Easy to Drive.
- 100% Avalanche Tested.
APPLICATIONS
- N-channel Enhancement mode Effect Transistor.
- Switching Applications.
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VDS Drain-Source Voltage
650 V
VGS ID IDM PD IAR EAS dv/dt
Gate -Source Voltage
Maximum Drain Current(continuous) at TC=25℃ TC=100℃
Drain Current(pulsed)Note1
Power Dissipation at TC=25℃
Avalavche Current,Repetitive or Not-repetitive Single Pulse Avalanche Energy (starting Tj=25℃,ID=IAR,VDD=50V) Peak Diode Recovery Voltage Slope(Note2)
25 12 7.3 48 90 4 200 15
V A A W A m J V/ns
RθJA Thermal Resistance,Junction-to-Ambient
Tj...
