BL18N25F
BL18N25F is N-Channel Power MOSFET manufactured by Galaxy Microelectronics.
FEATURES
- R =0.16Ω @ V =10V
DS(ON)
- High switching speed
APPLICATIONS
- N-Channel Power MOSFET.
- Switching Applications.
Production specification
MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
Symbol Parameter
Value
ITO-220AB Unit
VDS Drain-Source Voltage
25 V
VGS ID IDM PD EAS EAR RθJA RθJC Tj Tstg
Gate -Source Voltage Drain Current Continuous at TC=25℃ Drain Current(pulsed)Note1 Power Dissipation at TC=25℃ Avalanche Energy(Single Pulsed (Note 2)) Avalanche Energy (Repetitive(Note 3)) Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Junction and Storage Temperature Range
±20
18 A
72 A
40 W
360 m J
945 m J
62.5 ℃/W
3.1 ℃/W
-55 to +150 ℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse...
