Click to expand full text
N-Channel Power MOSFET
FEATURES
R =0.16Ω @ V =10V
DS(ON)
GS
High switching speed
APPLICATIONS
N-Channel Power MOSFET. Switching Applications.
Production specification
BL18N25F
MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
Symbol Parameter
Value
ITO-220AB Unit
VDS Drain-Source Voltage
25 V
VGS ID IDM PD EAS EAR RθJA RθJC Tj Tstg
Gate -Source Voltage Drain Current Continuous at TC=25℃ Drain Current(pulsed)Note1 Power Dissipation at TC=25℃ Avalanche Energy(Single Pulsed (Note 2)) Avalanche Energy (Repetitive(Note 3)) Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Junction and StorageTemperature Range
±20
V
18 A
72 A
40 W
360 mJ
945 mJ
62.5 ℃/W
3.1 ℃/W
-55 to +150 ℃
Note: 1.