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BL18N25F - N-Channel Power MOSFET

Features

  • R =0.16Ω @ V =10V DS(ON) GS.
  • High switching speed.

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N-Channel Power MOSFET FEATURES  R =0.16Ω @ V =10V DS(ON) GS  High switching speed APPLICATIONS  N-Channel Power MOSFET.  Switching Applications. Production specification BL18N25F MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Symbol Parameter Value ITO-220AB Unit VDS Drain-Source Voltage 25 V VGS ID IDM PD EAS EAR RθJA RθJC Tj Tstg Gate -Source Voltage Drain Current Continuous at TC=25℃ Drain Current(pulsed)Note1 Power Dissipation at TC=25℃ Avalanche Energy(Single Pulsed (Note 2)) Avalanche Energy (Repetitive(Note 3)) Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Junction and StorageTemperature Range ±20 V 18 A 72 A 40 W 360 mJ 945 mJ 62.5 ℃/W 3.1 ℃/W -55 to +150 ℃ Note: 1.
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