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BL200N06-S8 Datasheet

Manufacturer: Galaxy Microelectronics
BL200N06-S8 datasheet preview

Datasheet Details

Part number BL200N06-S8
Datasheet BL200N06-S8-GME.pdf
File Size 575.71 KB
Manufacturer Galaxy Microelectronics
Description N-Channel Enhancement Mode MOSFET
BL200N06-S8 page 2 BL200N06-S8 page 3

BL200N06-S8 Overview

Features Advanced trench technology Super low gate charge Green device available Excellent CdV / dt effect decline HBM: 1B N-Channel Enhancement Mode MOSFET BL200N06-S8 Case: UL Flammability Classification Rating 94V-0 Terminals:.

BL200N06-S8 Key Features

  • Advanced trench technology
  • Super low gate charge
  • Green device available
  • Excellent CdV / dt effect decline
  • HBM: JESD22-A114-B: 1B
  • Case: SOP-8
  • Molding pound: UL Flammability Classification Rating 94V-0
  • Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208
  • 55 ~ +175 -55 ~ +175
  • Typ. 40
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BL200N06-S8 Distributor

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