• Part: BL200N06-S8
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 575.71 KB
Download BL200N06-S8 Datasheet PDF
Galaxy Microelectronics
BL200N06-S8
Features - Advanced trench technology - Super low gate charge - Green device available - Excellent Cd V / dt effect decline - HBM: JESD22-A114-B: 1B N-Channel Enhancement Mode MOSFET BL200N06-S8 Mechanical Data - Case: SOP-8 - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 SOP-8 Ordering Information Part Number BL200N06-S8 Package SOP-8 Shipping Quantity 4000 pcs / Tape & Reel Marking Code 200N06 Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TA = 25°C) - 1 Continuous Drain Current (TA = 100°C) - 1 Pulsed Drain Current (tp = 10μs, TA = 25°C) Single Pulse Avalanche Energy - 3 Power Dissipation (TC = 25°C) Power Dissipation (TA = 25°C) - 1 Operating Junction Temperature Range Storage Temperature Range Symbol VDSS VGSS IDM EAS PD TJ TSTG Value 60 ±20 13 8.2 5.8...