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BL200N06-S8 - N-Channel Enhancement Mode MOSFET

Features

  • Advanced trench technology.
  • Super low gate charge.
  • Green device available.
  • Excellent CdV / dt effect decline.
  • HBM: JESD22-A114-B: 1B N-Channel Enhancement Mode MOSFET BL200N06-S8 Mechanical Data.
  • Case: SOP-8.
  • Molding Compound: UL Flammability Classification Rating 94V-0.
  • Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 SOP-8 Ordering Information Part Number BL200N06-S8 Package SOP-8 Shipping Quantity 4000 pcs / Tape & Re.

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Full PDF Text Transcription

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Features  Advanced trench technology  Super low gate charge  Green device available  Excellent CdV / dt effect decline  HBM: JESD22-A114-B: 1B N-Channel Enhancement Mode MOSFET BL200N06-S8 Mechanical Data  Case: SOP-8  Molding Compound: UL Flammability Classification Rating 94V-0  Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 SOP-8 Ordering Information Part Number BL200N06-S8 Package SOP-8 Shipping Quantity 4000 pcs / Tape & Reel Marking Code 200N06 Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TA = 25°C) *1 Continuous Drain Current (TA = 100°C) *1 Pulsed Drain Current (tp = 10μs, TA = 25°C) Single Pulse Avalanch
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