BL200N06R Description
N-Channel Enhancement Mode MOSFET BL200N06R.
BL200N06R Key Features
- Super low gate charge
- Green device available
- Excellent CdV / dt effect decline
- Advanced high cell density trench technology
- JESD22-A114-B ESD rating of class 1B per human body model
- Case: SOT-223
- Molding pound: UL Flammability Classification Rating 94V-0
- Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208
- 55 ~ +175 -55 ~ +175
- Typ. 19 45