• Part: BL200N06R
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 710.11 KB
Download BL200N06R Datasheet PDF
Galaxy Microelectronics
BL200N06R
Features - Super low gate charge - Green device available - Excellent Cd V / dt effect decline - Advanced high cell density trench technology - JESD22-A114-B ESD rating of class 1B per human body model Mechanical Data - Case: SOT-223 - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 SOT-223 Ordering Information Part Number BL200N06R Package SOT-223 Shipping Quantity 4000 pcs / Tape & Reel Marking Code 200N06R Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TA = 25°C) - 1 Continuous Drain Current (TA = 100°C) - 1 Pulsed Drain Current (tp = 10μs, TA = 25°C) Single Pulse Avalanche Energy - 3 Power Dissipation (TA = 25°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDSS VGSS IDM EAS PD TJ TSTG Value 60 ±20 12 7.5 5.3 75 40 2.5 -55 ~ +175...