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BL200N06R - N-Channel Enhancement Mode MOSFET

Features

  • Super low gate charge.
  • Green device available.
  • Excellent CdV / dt effect decline.
  • Advanced high cell density trench technology.
  • JESD22-A114-B ESD rating of class 1B per human body model Mechanical Data.
  • Case: SOT-223.
  • Molding Compound: UL Flammability Classification Rating 94V-0.
  • Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 SOT-223 Ordering Information Part Number BL200N06R Package SOT-223 Shipping Quantity 4000 pcs /.

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Datasheet Details

Part number BL200N06R
Manufacturer Galaxy Microelectronics
File Size 710.11 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet BL200N06R Datasheet
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N-Channel Enhancement Mode MOSFET BL200N06R Features  Super low gate charge  Green device available  Excellent CdV / dt effect decline  Advanced high cell density trench technology  JESD22-A114-B ESD rating of class 1B per human body model Mechanical Data  Case: SOT-223  Molding Compound: UL Flammability Classification Rating 94V-0  Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 SOT-223 Ordering Information Part Number BL200N06R Package SOT-223 Shipping Quantity 4000 pcs / Tape & Reel Marking Code 200N06R Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TA = 25°C) *1 Continuous Drain Current (TA = 100°C) *1 Pulsed Dra
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