BL300N06D Overview
Key Features
- Super low gate charge
- Green device available
- Excellent CdV / dt effect decline
- Advanced high cell density trench technology
- JESD22-A114-B ESD rating of class 1A per human body model Mechanical Data
| Part | BL300N06D |
|---|---|
| Description | N-Channel Enhancement Mode MOSFET |
| Category | MOSFET |
| Manufacturer | Galaxy Microelectronics |
| Size | 702.84 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| A2SHB | HAOHAI | N-Channel MOSFET |
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |