Datasheet4U Logo Datasheet4U.com
Galaxy Microelectronics logo

BL357

Manufacturer: Galaxy Microelectronics

BL357 datasheet PDF for Phototransistor.

BL357 datasheet preview

BL357 Datasheet Details

Part number BL357
Datasheet BL357-GME.pdf
File Size 1.41 MB
Manufacturer Galaxy Microelectronics
Description Phototransistor
BL357 page 2 BL357 page 3

BL357 Overview

Features Current transfer ratio (CTR: 80~600% at IF = 5mA, VCE = 5V) High isolation voltage between input and output (Viso =3750V rms ) Collector - emitter breakdown voltage BVCEO ≥ 80V Operating Temperature: CQC24001452346 Phototransistor BL357 Series 1 4 2 3 Applications Programmable controllers System appliances, measuring instruments Telemunication equipments Home appliances, such as Fan Heaters, etc Signal...

BL357 Key Features

  • Current transfer ratio (CTR: 80~600% at IF = 5mA, VCE = 5V)
  • High isolation voltage between input and output (Viso =3750V rms )
  • Collector
  • emitter breakdown voltage BVCEO ≥ 80V
  • Operating Temperature: -55℃~110℃
  • VDE : 40060715
  • UL : E340048
  • CQC : CQC24001452346
Galaxy Microelectronics logo - Manufacturer

More Datasheets from Galaxy Microelectronics

See all Galaxy Microelectronics datasheets

Part Number Description
BL350N04-3DL8 N-Channel Enhancement Mode MOSFET
BL300N06D N-Channel Enhancement Mode MOSFET
BL300N06I N-Channel Enhancement Mode MOSFET
BL3400 N-Channel Power Mosfet
BL3401 P-Channel High Density Trench MOSDET
BL3401L P-Channel MOSDET
BL3402 N-Channel Power Mosfet
BL3404 N-Channel Power Mosfet
BL3407 P-Channel Power Mosfet
BL3415 P-Channel Enhancement Mode MOSFET

BL357 Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts