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BL50N60 - N-Channel Power Mosfet

Key Features

  • RDS(ON) =17mΩ@ VGS = 10V,ID=20A.
  • High Current Capacity : ID=50A.
  • Low reverse current. Pb Lead-free Production specification BL50N60 TO-220AB.

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50A,60V N-Channel Power Mosfet FEATURES  RDS(ON) =17mΩ@ VGS = 10V,ID=20A  High Current Capacity : ID=50A  Low reverse current. Pb Lead-free Production specification BL50N60 TO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID Continuous Drain Current PD Power Dissipation TJ Junction Temperature TOPR, Tstg Operating and Storage Temperature Value 60 ±20 50 2 150 -55 to +150 Units V V A W ℃ ℃ X099 Rev.A www.gmesemi.