BL5N50 Overview
Production specification N-Channel Enhancement Mode Field Effect Transistor BL5N50.
BL5N50 Key Features
- Low on-resistance
- Low leakage current
- High speed switching
- Low gate charge
- Avalanche ratings
- 55 to +150 ℃
BL5N50 Details
| Part number | BL5N50 |
|---|---|
| Datasheet | BL5N50-GME.pdf |
| File Size | 364.71 KB |
| Manufacturer | Galaxy Microelectronics |
| Description | N-Channel Power Mosfet |
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