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BL5N50 - N-Channel Power Mosfet

Key Features

  • Low on-resistance.
  • Low leakage current.
  • High speed switching.
  • Low gate charge.
  • Avalanche ratings. TO-220AB.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production specification N-Channel Enhancement Mode Field Effect Transistor BL5N50 FEATURES  Low on-resistance.  Low leakage current.  High speed switching.  Low gate charge.  Avalanche ratings. TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VDS Drain-Source Voltage 500 V VGS ID ID(pulse) IDR IDR(pulse) IAP Gate -Source Voltage Drain Current Drain Current(pulsed) Note1 Body-drain diode reverse drain current Body-drain diode reverse drain peak current(pulsed) Note1 Avalanche current Note3 ±30 5 20 5 20 5 V A A A A A Pch Channel dissipation Note2 30 W RθJA Channel to case Thermal Impedance 4.17 ℃/W Tch Channel temperature 150 ℃ Tstg StorageTemperature Range Note: 1.PW ≤10us, duty cycle ≤ 1 % 2.