BL9N20 Datasheet | Galaxy Microelectronics

Production specification N-Channel Enhancement Mode Field Effect Transistor BL9N20 Features - Trench FET Power MOSFETS. - 175℃ Junction Temperature. - New Low Thermal Resistance Package. Pb Lead-free TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value VDS Drain-Source Voltage VGS Gate -Source Voltage ±20 Continuous Drain Current(TJ=175℃) TC=25℃ TC=125℃ 9 5.2 IDM Pulsed Drain Current IAR Avalanche Current 10 7 Power Dissipation at TC=25℃ TA=25℃(Note1) EAS Rth JA Single Pulse Avalanche Energy L = 0.1 Mh(Note2) Junction-to-Ambient (PCB Mount)c Rth JC Junction-to-Case (Drain) Tj Tstg Operating Junction and Storage Tem-perature Range Note:1.When mounted on 1“ square PCB(FR-4 material) 2.Duty...