BL9N20 Description
Production specification N-Channel Enhancement Mode Field Effect Transistor BL9N20.
BL9N20 Key Features
- TrenchFET Power MOSFETS
- 175℃ Junction Temperature
- New Low Thermal Resistance Package
- Part: BL9N20
- Manufacturer: Galaxy Microelectronics
- Size: 275.27 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
BELLING |
BL9N20 | Power MOSFET |