BL9N20 Overview
Production specification N-Channel Enhancement Mode Field Effect Transistor BL9N20.
BL9N20 Key Features
- TrenchFET Power MOSFETS
- 175℃ Junction Temperature
- New Low Thermal Resistance Package
Datasheet Details
| Part number | BL9N20 |
|---|---|
| Datasheet | BL9N20-GME.pdf |
| File Size | 275.27 KB |
| Manufacturer | Galaxy Microelectronics |
| Description | N-Channel Power Mosfet |
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