The BL9N20 is a N-Channel Power Mosfet.
| Part Number | BL9N20 Datasheet |
|---|---|
| Manufacturer | Galaxy Microelectronics |
| Overview |
Production specification
N-Channel Enhancement Mode Field Effect Transistor BL9N20
FEATURES
TrenchFET Power MOSFETS. 175℃ Junction Temperature. New Low Thermal Resistance Package.
Pb
Lead-fre.
* TrenchFET Power MOSFETS. * 175℃ Junction Temperature. * New Low Thermal Resistance Package. Pb Lead-free TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value VDS Drain-Source Voltage 200 VGS Gate -Source Voltage ±20 ID Continuous. |
| Part Number | BL9N20 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | BELLING |
| Overview |
BL9N20, the silicon N-channel Enhanced
MOSFETs, is obtained by advanced MOSFET
technology which reduce the conduction loss,
improve switching performance and enhance the
avalanche energy. The tra.
* Fast Switching * Low Crss * 100% avalanche tested * Improved dv/dt capability * RoHS product APPLICATIONS * High frequency switching mode power supply TO-220 TO-251 TO-220F TO-252 ORDERING INFORMATION Ordering Codes Package BL9N20-P TO-220 BL9N20-A TO-220F BL9N20-U TO-251 BL9N20-. |