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BSS8402DW - MOSFET

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Complementary Pair. Pb Lead-free SOT-363.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production specification Complementary Pair Enhancement Mode Field Effect Transistor BSS8402DW FEATURES  Low On-Resistance.  Low Gate Threshold Voltage.  Low Input Capacitance.  Fast Switching Speed.  Low Input/Output Leakage.  Complementary Pair. Pb Lead-free SOT-363 ORDERING INFORMATION Type No. Marking BSS8402DW KNP Package Code SOT-363 MAXIMUM RATING – Total Device @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units PD Power Dissipation 200 mW RθJA Thermal resistance,Junction-to-Ambient 625 ℃/W TJ, Tstg Junction and Storage Temperature -55 to +150 ℃ Maximum Ratings N-CHANNEL –Q1, 2N7002 Section @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 60 VDGR VGSS ID Drain-Gate voltage(RGS≤1.