Galaxy Century Microelectronics FMMT458
NPN Silicon Epitaxial Planar Transistor
| Part No. | FMMT458 |
|---|---|
| Datasheet | FMMT458 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | NPN Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
● High voltage.● Complementary To FMMT558. Pb Lead-free Production specification FMMT458 ORDERING INFORMATION Type No. Marking FMMT458 458 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 400 VCEO VEBO IC ICM IB Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Peak Pulse Current Base Current 400 5 225 1 200 Ptot Power Dissipation 500 Tj，Tstg Junction and Storage Temperature -55 to +150 Units V V V mA A mA mW ℃ C189 Rev.A 1 Production specification NPN Silicon Epitaxial Planar Transistor FMMT458
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 400 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 400 V Emitter-base breakdown voltage
