FMMT458 Datasheet | Galaxy Microelectronics

FEATURES - High voltage. - plementary To FMMT558. Pb Lead-free Production specification ORDERING INFORMATION Type No. Marking SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage VCEO VEBO IC ICM IB Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Peak Pulse Current Base Current 400 5 225 1 200 Ptot Power Dissipation Tj，Tstg Junction and Storage Temperature -55 to +150 Units V V V m A A m A m W ℃ C189 Rev.A .gmesemi. Production specification NPN Silicon Epitaxial Planar Transistor ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=10m...