FZT955
FZT955 is PNP Silicon Epitaxial Planar Transistor manufactured by Galaxy Microelectronics.
Features
- Low Collector-Emitter saturation voltage VCE(sat)
- High collector current capability
Mechanic al Data
- Case: SOT-223
- Molding pound: UL flammability classification rating 94V-0
- Terminals: Tin-plated; solderability per MIL-STD-202, Method 208
SOT-223
Ordering Information
Part Number FZT955
Package SOT-223
Shipping Quantity 4000 pcs / Tape & Reel
Marking Code FZT955
Maximum Ratings (@ TA = 25℃ unless otherwise specified)
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current (Continuous) Collector Current (Peak) Base Current
Symbol VCBO VCEO VEBO IC ICM IB
Thermal Characteristics
Parameter Power Dissipation Thermal Resistance Junction-to-Air Thermal Resistance Junction-to-Case Junction Temperature Range Storage Temperature Range
Symbol PD RθJA RθJC TJ TSTG
Value -180 -140 -6 -4 -10 -3
Value 1 68 3
-55 ~ +150 -55 ~ +150
Unit V V V A A A
Unit W
°C/W °C/W
°C °C
STM0035A: May 2022
.gmesemi.
PNP Silicon Epitaxial Planar Transistor FZT955
Electrical Characteristics (@ TA = 25℃ unless otherwise specified)
Parameter
Symbol
Test Condition
Min. Typ. Max. Unit
Collector-Base Breakdown Voltage
V(BR)CBO IC = -100μA, IE = 0
-180
-...
