FZT955 Datasheet | Semiware Semiconductor

FEATURES Low Collector-Emitter saturation voltage VCE(sat) High collector current capability MECHANICAL DATA Case: SOT-223 Molding pound: UL flammability classification rating 94V-0 Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 APPROVALS Ro HS pliance with 2011/65/EU HF pliance with IEC61249-2-21:2003 MAXIMUM RATINGS (TA=25°C ) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current (Continuous) Collector Current (Peak) Base Current Power Dissipation Thermal Resistance Junction-to-Air Thermal Resistance Junction-to-Case Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC ICM IB PD RθJA RθJC TJ TSTG Plastic-Encapsulate Transistor (PNP) 12 3 SOT-223 ZT955 Marking C (2,4) B (1) E (3) Schematic Symbol Value -180 -140 -6 -4 -10 -3 1 68 3 -55~+150 -55~+150 Unit A A A W ℃/W ℃/W ℃ ℃ Product Datasheet Rev. A2.0 1/6 Build Your Design As You Will Http://semiware. Plastic-Encapsulate Transistor (PNP) ELECTRICAL CHARACTERISTICS (TA=25°C) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-off Current ICBO Emitter Cut-off Current IEBO DC Current Gain h FE Collector-Emitter Saturation Voltage VCE(sat)...