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GKF07N65 Datasheet

Manufacturer: Galaxy Microelectronics
GKF07N65 datasheet preview

Datasheet Details

Part number GKF07N65
Datasheet GKF07N65-GME.pdf
File Size 600.04 KB
Manufacturer Galaxy Microelectronics
Description Trench FS IGBT With Full Rated Diode
GKF07N65 page 2 GKF07N65 page 3

GKF07N65 Overview

Trench FS IGBT With Full Rated Diode GKF07N65.

GKF07N65 Key Features

  • High breakdown voltage to 650V for improved reliability
  • Trench-stop technology offering
  • High speed switching
  • High ruggedness, temperature stable behavior
  • Short circuit withstand time: 10μs
  • Low VCE(SAT)
  • Easy parallel switching capability due to positive temperature coefficient
  • Enhanced avalanche capability
  • RoHS pliant with Halogen-free
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