GKF07N65 Datasheet | Galaxy Microelectronics

Features - High breakdown voltage to 650V for improved reliability - Trench-stop technology offering: - High speed switching - High ruggedness, temperature stable behavior - Short circuit withstand time: 10μs - Low VCE(SAT) - Easy parallel switching capability due to positive temperature coefficient in VCE(SAT) - Enhanced avalanche capability - Ro HS pliant with Halogen-free Applications - Uninterruptible power supplies - Solar inverter Mechanical Data - Case: TO-220MF - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 TO-220MF Ordering Information Part Number GKF07N65 Package TO-220MF Shipping Quantity 50 pcs / Tube Marking Code KF07N65 Maximum Ratings (@ TC = 25°C unless otherwise specified) Parameter Collector-to-Emitter Voltage Gate-Emitter Voltage DC Collector Current (TC = 25°C, limited by maximum TJ) DC Collector Current (TC = 100°C, limited by maximum TJ) Diode Continuous Forward Current (TC = 25°C, limited by maximum TJ) Diode Continuous Forward Current (TC = 100°C, limited by maximum TJ) Pulsed Collector Current (Pulse width limited by maximum TJ, VGE = 15V) Short Circuit Withstand Time (VGE = 15V, VCE ≤ 400V) Soldering Temperature, Wave Soldering 1.6mm (0.063in.) from Case for 10s Power Dissipation (TC = 25°C) Operating Junction Temperature Range Storage Temperature Range Symbol VCES VGES ICM TSC Tsold PD TJ TSTG Value 650 ±20 14 7 14 7 21 10 260 36 -55 ~ +150 -55 ~ +150 Unit V V A A A A A μs °C W °C °C IGM0039A: May 2024 [2.0] .gmesemi. Trench FS IGBT With Full Rated Diode GKF07N65 Thermal Characteristics Parameter Thermal Resistance Junction-to-Case, IGBT Thermal Resistance Junction-to-Case, Diode Thermal Resistance Junction-to-Air Symbol RθJC...