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KTB1368 - PNP Epitaxial Planar Silicon Transistors

Key Features

  • z Good Linearity of hfe. z Complementary to KTD2060 Pb Lead-free Production specification KTB1368 TO-220AB.

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PNP Epitaxial Planar Silicon Transistors FEATURES z Good Linearity of hfe. z Complementary to KTD2060 Pb Lead-free Production specification KTB1368 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Tc=25℃ Junction and Storage Temperature -80 V -5 V -4 A -0.4 A 25 W -55 to +150 ℃ X140 Rev.A www.gmicroelec.com 1 Production specification PNP Epitaxial Planar Silicon Transistors KTB1368 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.