KTB1368 Datasheet | Galaxy Microelectronics

FEATURES z Good Linearity of hfe. z plementary to KTD2060 Pb Lead-free Production specification TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Tc=25℃ Junction and Storage Temperature -80 V -5 V -4 A -0.4 A 25 W -55 to +150 ℃ X140 Rev.A .gmicroelec. 1 Production specification PNP Epitaxial Planar Silicon Transistors ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter Breakdown Voltage V(BR)CEO IC=-50m A,IB=0 -80 Collector Cut-off Current ICBO VCB=-80V,IE=0 -30 μA Emitter Cut-off Current IEBO VEB=-5V,IC=0 -100 μA DC Current Gain h FE VCE=-5V,IC=-...