The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PNP Epitaxial Planar Silicon Transistors
FEATURES
z Good Linearity of hfe. z Complementary to KTD2060
Pb
Lead-free
Production specification
KTB1368
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
-80 V
VCEO VEBO IC IB PC Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Tc=25℃
Junction and Storage Temperature
-80 V -5 V -4 A -0.4 A 25 W -55 to +150 ℃
X140 Rev.A
www.gmicroelec.com 1
Production specification
PNP Epitaxial Planar Silicon Transistors
KTB1368
ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.