Datasheet Summary
isc Silicon PNP Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
- Collector Power Dissipation-
: PC= 25W@ TC= 25℃
- Low Collector Saturation Voltage-
: VCE(sat)= -1.7V(Max)@ (IC= -3A, IB= -0.3A)
- plement to Type KTD2060
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose...
