Datasheet4U Logo Datasheet4U.com

KTB1366 - Silicon PNP Power Transistors

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) Collector Power Dissipation- : PC= 25 W@ TC= 25℃ Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) Complement to Type KTD2058 Minimum Lot-to-Lot variations for robust device performance a

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KTB1366 Silicon PNP transistor BLUE ROCKET ELECTRONICS
KTB1366 PNP Transistor JCET
KTB1366 TRIPLE DIFFUSED PNP TRANSISTOR KEC
KTB1367 TRIPLE DIFFUSED PNP TRANSISTOR KEC
KTB1368 PNP Epitaxial Planar Silicon Transistors GME

Other Datasheets by Inchange Semiconductor

Part Number Description
KTB1367 Silicon PNP Power Transistors
KTB1368 Silicon PNP Power Transistors
KTB1369 Silicon PNP Power Transistors
KTB2510 Silicon PNP Power Transistors
KTB2955 Silicon PNP Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) ·Complement to Type KTD2058 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.