Galaxy Century Microelectronics KTC4376
Epitaxial Planar NPN Transistor
FEATURES
z PC=1W(Mounted on ceramic substrate). z Small flat package. Pb Lead-free z Complementary: KTA1664. Production specification KTC4376 ORDERING INFORMATION Type No. Marking KTC4376 PO/PY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC IB Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base current 35 30 5 0.8 0.16 PC Collector Power Dissipation PC* Tj Junction Temperature 500 1 150 Tstg Storage Temperature Range PC*:KTC4376 mounted on ceramic substrate (250mm2x0.8t) -55 to +150 Units V V V A A mW W ℃ ℃ E127 Rev.A 1 Production specification Epitaxial Planar NPN Transistor KTC4376ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-bas