KTC4378 Datasheet | Galaxy Microelectronics

FEATURES - High Voltage:VCEO=60V(Min) - High Current:IC(Max)=1A - Wide Area of Safe Operation Pb Lead-free Production specification ORDERING INFORMATION Type No. Marking TY/TGR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC ICP Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse 80 60 5 1 2 PC Collector Power Dissipation PC- Tj Junction Temperature Tstg Storage Temperature PC- :KTC4378mounted on ceramic substrate(250mm2x0.8t) 500 1 150 -55 to +150 Units V V V A A m W W ℃ ℃ E021 Rev.A .gmesemi. Production specification Epitaxial Planar NPN Transistor ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base...