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MBR20150 - Schottky Barrier Rectifier

Key Features

  • z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use in Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protection.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production specification Schottky Barrier Rectifier MBR20150--MBR20200 FEATURES z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use in Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protection Applications. TO-220AC MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter MBR20150 MBR20200 Unit VRRM Recurrent Peak Reverse Voltage 150 200 V VRMS VDC I(AV) IFSM RθJC Tj Tstg RMS Reverse Voltage DC Blocking Voltage Average Forward Total Device Rectified Current @TA=100℃ Peak Forward Surge Current 8.