FEATURES
● Schottky Barrier Chip 1. CATHODE 2. ANODE
● Guard Ring Die Construction for Transient Protection
● Low Power Loss,High Efficiency
● High Surge Capability
● High Current Capability and Low Forward Voltage Drop
● For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection APPLICATIONS
MAXIMUM RATINGS
( Ta=25℃ unless otherwise noted ) Symbol Parameter MBR20125 Value MBR20150 MBR20200 VRRM VRWM VR VR(RMS) IO PD RΘJA Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature 125 87.5 150 105 20 2 50 125 -55~+150 200 140 ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Symbol Device Test conditions Min Reverse voltage Reverse current Forward voltage V(BR) IR VF(1) VF(2) MBR20125 MBR20150 MBR20200 MBR20125 MBR20150 MBR20200 MBR20125 MBR20150 MBR202...
JCST