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MMBD452 - Dual Hot-Carrier Diodes

Features

  • z Very low capacitance. Pb z Extremely low minority carrier lifetime. Lead-free z Low reverse leakage. z Power dissipation Pd=225mW. MMBD452.

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Datasheet Details

Part number MMBD452
Manufacturer GME
File Size 145.87 KB
Description Dual Hot-Carrier Diodes
Datasheet download datasheet MMBD452 Datasheet
Additional preview pages of the MMBD452 datasheet.

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Full PDF Text Transcription

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Production specification Dual Hot-Carrier Diodes FEATURES z Very low capacitance. Pb z Extremely low minority carrier lifetime. Lead-free z Low reverse leakage. z Power dissipation Pd=225mW. MMBD452 APPLICATIONS z Designed primarily for UHF and VHF detector applications. ORDERING INFORMATION Type No. Marking MMBD452 5N SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Continuous reverse voltage VR Power Dissipation Pd Operating junction temperature range TJ Junction and storage temperature TSTG Limits 30 225 -55 to +125 -55 to +150 Unit V mW ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Reverse Breakdown Voltage Forward voltage Reverse current Symbol Min. V(BR) 30 VF IR Typ. 0.
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