MMBD452 Datasheet | Galaxy Microelectronics

Production specification Dual Hot-Carrier Diodes Features z Very low capacitance. Pb z Extremely low minority carrier lifetime. Lead-free z Low reverse leakage. z Power dissipation Pd=225mW. APPLICATIONS z Designed primarily for UHF and VHF detector applications. ORDERING INFORMATION Type No. Marking 5N SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Continuous reverse voltage Power Dissipation Pd Operating junction temperature range Junction and storage temperature TSTG Limits 30 225 -55 to +125 -55 to +150 Unit V mW ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter...