MMBD452LT1G Datasheet | onsemi

Features - Extremely Low Minority Carrier Lifetime - Very Low Capacitance - Low Reverse Leakage - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C 225 m W 1.8 m W/C Operating Junction Temperature Range - 55 to +125 C Storage Temperature Range Tstg - 55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 m A) V(BR)R 30 - - Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 - 0.9 1.5 p F Reverse Leakage (VR = 25 V) Figure 3 - 13 200 n Adc Forward Voltage...