MMBD452LT1G Description
Dual Hot-Carrier Diodes Schottky Barrier Diodes MMBD452LT1G These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/mercial requirements.
MMBD452LT1G Key Features
- Extremely Low Minority Carrier Lifetime
- Very Low Capacitance
- Low Reverse Leakage
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
- 0.9 1.5 pF
- 13 200 nAdc
- 0.38 0.45 Vdc
- 0.52 0.6 Vdc
- Rev. 6