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MMBT2907 - PNP General Purpose Amplifier

Key Features

  • z Epitaxial planar die construction. z Ideal for medium power amplification and switching. Pb Lead-free MMBT2907.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production specification PNP General Purpose Amplifier FEATURES z Epitaxial planar die construction. z Ideal for medium power amplification and switching. Pb Lead-free MMBT2907 APPLICATIONS z This device is designed as a general purpose amplifier and switching. ORDERING INFORMATION Type No. Marking MMBT2907 M2B SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PD RθJA Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Thermal resistance,Junction to ambient -60 -40 -5 -600 350 357 Tj,Tstg Junction and Storage Temperature -55 to +150 Unit V V V mA mW ℃/W ℃ C090 Rev.A www.gmicroelec.