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PNP EPITAXIAL SILICON TRANSISTOR
MMBT2907/ALT1
GENERAL PURPOSE TRANSISTOR ▪ Complement to MMBT2222/ALT1 ▪ Collector Dissipation: Pc(max)=225mW
Package:SOT-23
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic
Symbol Rating
2907 2907A
Collector-Base Voltage
Vcbo
-60
Collector-Emitter Voltage
Vceo -40 -60
Emitter-Base Voltage
Vebo
-5
Collector Current
Ic -600
Collector Dissipation Ta=25℃*
PD
225
Junction Temperature
Tj 150
Storage Temperature
Tstg -55-150
Unit
V V V mA mW ℃ ℃
PIN: STYLE
NO 1
123 BEC
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Symbol Min Max Unit
Test Conditions
Collector-Base Breakdown Voltage
BVcbo -60
V Ic=-10uA Ie=0
Collector-Emitter Breakdown Voltage MMBT2907 MMBT2907A
BVceo
-40 -60
V Ic= -10mA Ib=0
Emitter-Base Breakdown Volt
MMBT2907 Datasheet
