MMBTA55 Datasheet | Galaxy Microelectronics

Features - Epitaxial planar die construction - plementary to MMBTA05 - Ro HS pliant with Halogen-free PNP Silicon Epitaxial Planar Transistor MMBTA55 Mechanical Data - Case: SOT-23 - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 SOT-23 Ordering Information Part Number MMBTA55 Package SOT-23 Shipping Quantity 3000 pcs / Tape & Reel Marking Code 2H Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Continuous Collector Current Peak Collector Current Base Current Symbol VCBO VCEO VEBO IC ICM IB Value -60 -60 -4 -0.5 -1 -0.2 Unit V V V A A A Thermal Characteristics Parameter Symbol Power Dissipation( TA = 25°C) Thermal Resistance Junction-to-Air - 1 Thermal Resistance Junction-to-Case - 1 Thermal Resistance Junction-to-Lead - 1 Junction Temperature Range Storage Temperature Range PD RθJA RθJC RθJL TJ TSTG Note 1: The data tested by surface mounted on a 15mm - 15mm - 1mm FR4-epoxy P.C.B Value 350 330 160 120 -55 ~ +150 -55 ~ +150 Unit m W °C/W °C/W °C/W °C °C STM0854A: July 2024 [2.0] .gmesemi. PNP Silicon Epitaxial Planar Transistor MMBTA55 Electrical Characteristics (@ TA = 25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off...